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211RA MP3508W 74LV164 MGF1902B C1104 78L005 AD547LH ASI10600
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  0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2SB815 features ultrasmall package allows miniaturization in end products. large current capacity (i c =0.7a) and low-saturation voltage. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -20 v collector-emitter voltage v ceo -15 v emitter-base voltage v ebo -5 v collector current i c -0.7 a collector current (pulse) i cp -1.5 a collector dissipation p c 200 mw jumction temperature t j 125 storage temperature t stg -55to+125 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current ic bo v cb = -15v , i e =0 -0.1 a emitter cutoff current i ebo v eb =-4v,i c =0 -0.1 a dc current gain h fe v ce =-2v,i c = -50ma 200 600 gain bandwidth product f t v ce = -10v , i c = -50ma 250 mhz output capacitance c ob v cb = -10v , f = 1mhz 13 pf v ce(sat) i c =-5ma,i b = -0.5ma -15 -35 mv v ce(sat) i c = -100ma , i b = -10ma -60 -120 mv collector-emitter saturation voltage h fe classification marking b6 b7 hfe 200 400 300 600 product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123


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